| PART |
Description |
Maker |
| NPR2-T221 NHS2-T221 NHR2-T221 NPS2-T220 NPS2-T221 |
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-220
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, SURFACE MOUNT TO-220
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-221
Power Resistors
|
Riedon, Inc.
Riedon Powertron
|
| STB11NM60-1 STB11NM60T4 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
STMICROELECTRONICS
|
| S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| JANSR2N7401 FN4571 |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| STW10NB60 |
10 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
STMICROELECTRONICS
|
|
